The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2013

Filed:

Jul. 22, 2010
Applicants:

Shih-hsien Wu, Taoyuan County, TW;

Min-lin Lee, Hsinchu, TW;

Shinn-juh Lai, Hsinchu County, TW;

Shur-fen Liu, Hsinchu County, TW;

Meng-hua Chen, Kaohsiung County, TW;

Chin-hsien Hung, Taichung County, TW;

Inventors:

Shih-Hsien Wu, Taoyuan County, TW;

Min-Lin Lee, Hsinchu, TW;

Shinn-Juh Lai, Hsinchu County, TW;

Shur-Fen Liu, Hsinchu County, TW;

Meng-Hua Chen, Kaohsiung County, TW;

Chin-Hsien Hung, Taichung County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/005 (2006.01); H01G 5/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

The disclosure provides a capacitor structure. A first dielectric layer is disposed over the first electrode layer. A second electrode layer is disposed over the first dielectric layer. At least one of the first electrode layer and the second electrode layer has a peak-valley like structure to create at least two different gap distances therebetween, thereby providing parallel combinations of at least two different capacitances.


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