The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2013

Filed:

Jan. 31, 2011
Applicant:

Byung Ho Nam, Daegu-Si, KR;

Inventor:

Byung Ho Nam, Daegu-Si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a semiconductor device includes forming an interlayer dielectric film on a semiconductor substrate including a pattern region and a dummy region, forming a photoresist pattern on the interlayer dielectric film such that the pattern region and the dummy region are partially exposed, etching the interlayer dielectric film exposed through the photoresist pattern as an etching mask to form a contact hole and a dummy contact hole, filling the contact hole and the dummy contact hole with a conductive material to form a contact plug and a dummy plug, depositing a semiconductor layer on the contact plug and the dummy plug, and subjecting the semiconductor layer to patterning to form a semiconductor layer pattern and a dummy pattern.


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