The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2013

Filed:

Jun. 04, 2010
Applicants:

Perceval Coudrain, Grenoble, FR;

Philippe Coronel, Barraux, FR;

Nicolas Buffet, Evian les Bains, FR;

Inventors:

Perceval Coudrain, Grenoble, FR;

Philippe Coronel, Barraux, FR;

Nicolas Buffet, Evian les Bains, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a level of a tridimensional structure on a first support in which components are formed, including the steps of forming, on a second semiconductor support, a single-crystal semiconductor substrate with an interposed thermal oxide layer; placing the free surface of the single-crystal semiconductor substrate on the upper surface of the first support; eliminating the second semiconductor support; and thinning down the thermal oxide layer down to a thickness capable of forming a gate insulator.


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