The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Jul. 18, 2011
Po-cheng Huang, Chiayi, TW;
Kuo-chih Lai, Tainan, TW;
Ching-i LI, Tainan, TW;
Yu-shu Lin, Ping-Tung County, TW;
Ya-jyuan Hung, Kaohsiung, TW;
Yen-liang LU, Kaohsiung, TW;
Yu-wen Wang, New Taipei, TW;
Hsin-chih Yu, Hsinchu County, TW;
Po-Cheng Huang, Chiayi, TW;
Kuo-Chih Lai, Tainan, TW;
Ching-I Li, Tainan, TW;
Yu-Shu Lin, Ping-Tung County, TW;
Ya-Jyuan Hung, Kaohsiung, TW;
Yen-Liang Lu, Kaohsiung, TW;
Yu-Wen Wang, New Taipei, TW;
Hsin-Chih Yu, Hsinchu County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A manufacturing method for a metal gate includes providing a substrate having a dielectric layer and a polysilicon layer formed thereon, the polysilicon layer, forming a protecting layer on the polysilicon layer, forming a patterned hard mask on the protecting layer, performing a first etching process to etch the protecting layer and the polysilicon layer to form a dummy gate having a first height on the substrate, forming a multilayered dielectric structure covering the patterned hard mask and the dummy gate, removing the dummy gate to form a gate trench on the substrate, and forming a metal gate having a second height in the gate trench. The second height of the metal gate is substantially equal to the first height of the dummy gate.