The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8482973 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 09, 2013

Filed:

Aug. 07, 2012
Applicants:

S. Brad Herner, San Jose, CA (US);

Abhijit Bandyopadhyay, San Jose, CA (US);

Inventors:

S. Brad Herner, San Jose, CA (US);

Abhijit Bandyopadhyay, San Jose, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/36 (2006.01); G11C 11/34 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell is provided that includes a first conductor, a second conductor, and a semiconductor junction diode between the first and second conductors. The semiconductor junction diode is not in contact with a material having a lattice mismatch of less than 12 percent with the semiconductor junction diode. In addition, no resistance-switching element having its resistance changed by application of a programming voltage by more than a factor of two is disposed between the semiconductor junction diode and the first conductor or between the semiconductor junction diode and the second conductor. Numerous other aspects are provided.


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