The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Jun. 22, 2009
John J. Benoit, Williston, VT (US);
Mattias E. Dahlstrom, Burlington, VT (US);
Mark D. Dupuis, South Burlington, VT (US);
Peter B. Gray, Jericho, VT (US);
Anthony K. Stamper, Williston, VT (US);
John J. Benoit, Williston, VT (US);
Mattias E. Dahlstrom, Burlington, VT (US);
Mark D. Dupuis, South Burlington, VT (US);
Peter B. Gray, Jericho, VT (US);
Anthony K. Stamper, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A bipolar transistor structure and a method for fabricating the bipolar transistor structure include: (1) a collector structure located at least in-part within a semiconductor substrate; (2) a base structure contacting the collector structure; and (3) an emitter structure contacting the base structure. The interface of the emitter structure and the base structure includes an oxygen impurity and at least one impurity selected from the group consisting of a fluorine impurity and a carbon impurity, to enhance performance of a bipolar transistor within the bipolar transistor structure. The impurities may be introduced into the interface by plasma etch treatment, or alternatively a thermal treatment followed by an anhydrous ammonia and hydrogen fluoride treatment, of a base material from which is comprised the base structure.