The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Jan. 07, 2009
Saneyuki Goya, Kanagawa, JP;
Eishiro Sasakawa, Nagasaki, JP;
Hiroshi Mashima, Nagasaki, JP;
Satoshi Sakai, Kanagawa, JP;
Saneyuki Goya, Kanagawa, JP;
Eishiro Sasakawa, Nagasaki, JP;
Hiroshi Mashima, Nagasaki, JP;
Satoshi Sakai, Kanagawa, JP;
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
Abstract
A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic devicehaving a photovoltaic layercomprising a crystalline silicon layer formed on a substrate, wherein the crystalline silicon layer has a crystalline silicon i-layer, and the crystalline silicon i-layerhas a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.