The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Mar. 29, 2010
Malcolm J. Bevan, Santa Clara, CA (US);
Johanes Swenberg, Los Gatos, CA (US);
Son T. Nguyen, San Jose, CA (US);
Wei Liu, San Jose, CA (US);
Jose Antonio Marin, San Jose, CA (US);
Jian LI, Fremont, CA (US);
Malcolm J. Bevan, Santa Clara, CA (US);
Johanes Swenberg, Los Gatos, CA (US);
Son T. Nguyen, San Jose, CA (US);
Wei Liu, San Jose, CA (US);
Jose Antonio Marin, San Jose, CA (US);
Jian Li, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas comprising nitrogen while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. In some embodiments, the process gas includes ammonia (NH).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile