The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2013

Filed:

Jul. 24, 2008
Applicants:

Ravi Kanjolia, North Andover, MA (US);

Rajesh Odedra, Altrincham Cheshire, GB;

Neil Boag, Mytholmroyd W. Yorkshire, GB;

David Weyburne, Maynard, MA (US);

Inventors:

Ravi Kanjolia, North Andover, MA (US);

Rajesh Odedra, Altrincham Cheshire, GB;

Neil Boag, Mytholmroyd W. Yorkshire, GB;

David Weyburne, Maynard, MA (US);

Assignee:

Sigma-Aldrich Co., LLC, St. Louis, MO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/06 (2006.01); C23C 16/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C-alkyl; X is C-C-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.


Find Patent Forward Citations

Loading…