The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Aug. 30, 2011
Jie-ning Yang, Ping-Tung County, TW;
Shih-chieh Hsu, New Taipei, TW;
Chun-hsien Lin, Tainan, TW;
Yao-chang Wang, Tainan, TW;
Chi-horn Pai, Tainan, TW;
Chi-sheng Tseng, Kaohsiung, TW;
Jie-Ning Yang, Ping-Tung County, TW;
Shih-Chieh Hsu, New Taipei, TW;
Chun-Hsien Lin, Tainan, TW;
Yao-Chang Wang, Tainan, TW;
Chi-Horn Pai, Tainan, TW;
Chi-Sheng Tseng, Kaohsiung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, respectively forming a transistor having a dummy gate in the transistor region and a resistor in the resistor region, removing the dummy gate and portions of the resistor to form a first trench in the transistor and two second trenches in the resistor, forming at least a high-k gate dielectric layer in the first trench and the second trenches, and forming a metal gate in the first trench and metal structures respectively in the second trenches.