The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Dec. 06, 2010
John Hongguang Zhang, Fishkill, NY (US);
Cindy Goldberg, Cold Spring, NY (US);
Walter Kleemeier, Fishkill, NY (US);
Ronald Kevin Sampson, Lagrangeville, NY (US);
John Hongguang Zhang, Fishkill, NY (US);
Cindy Goldberg, Cold Spring, NY (US);
Walter Kleemeier, Fishkill, NY (US);
Ronald Kevin Sampson, Lagrangeville, NY (US);
STMicroelectronics, Inc., Coppell, TX (US);
Abstract
A copper interconnect structure has an intrinsic graphene cap for improving back end of line (BEOL) reliability of the interconnect by reducing time-dependent dielectric breakdown (TDDB) failure and providing resistance to electromigration. Carbon atoms are selectively deposited onto a copper layer of the interconnect structure by a deposition process to form a graphene cap. The graphene cap increases the activation energy of the copper, thus allowing for higher current density and improved resistance to electromigration of the copper. By depositing the graphene cap on the copper, the dielectric regions remain free of conductors and, thus, current leakage within the interlayer dielectric regions is reduced, thereby reducing TDDB failure and increasing the lifespan of the interconnect structure. The reduction of TDDB failure and improved resistance to electromigration improves BEOL reliability of the copper interconnect structure.