The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Dec. 23, 2010
Hiekazu Miyairi, Kanagawa, JP;
Shinya Sasagawa, Kanagawa, JP;
Motomu Kurata, Kanagawa, JP;
Asami Tadokoro, Tokyo, JP;
Hiekazu Miyairi, Kanagawa, JP;
Shinya Sasagawa, Kanagawa, JP;
Motomu Kurata, Kanagawa, JP;
Asami Tadokoro, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A thin film transistor with favorable electric characteristics is provided. The thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor layer which includes a microcrystalline semiconductor region and an amorphous semiconductor region, an impurity semiconductor layer, a wiring, a first oxide region provided between the microcrystalline semiconductor region and the wiring, and a second oxide region provided between the amorphous semiconductor region and the wiring, wherein a line tangent to the highest inclination of an oxygen profile in the first oxide region (m1) and a line tangent to the highest inclination of an oxygen profile in the second oxide region (m2) satisfy a relation of 1<m1/m2<10, on the semiconductor layer side from an intersection of a profile of an element included in the wiring and a profile of an element included in the semiconductor layer.