The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Oct. 02, 2008
Applicants:

Ho Jin Cho, Gyeonggi-do, KR;

Cheol Hwan Park, Gyeonggi-do, KR;

Jae Wook Seo, Seoul, KR;

Jong Kuk Kim, Gyeonggi-do, KR;

Inventors:

Ho Jin Cho, Gyeonggi-do, KR;

Cheol Hwan Park, Gyeonggi-do, KR;

Jae Wook Seo, Seoul, KR;

Jong Kuk Kim, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate; and support patterns formed to fix the storage nodes in the form of an 'L' or a '+' when viewed from the top. This semiconductor device having support patterns in the form of an ‘L’ or a ‘+’ reduces stress on the storage nodes when subsequently forming a dielectric layer and plate nodes that prevents the capacitors from leaking.


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