The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Sep. 08, 2008
Yoshiyuki Suda, Koganei, JP;
Yutaka Ota, Ota, JP;
Yoshiyuki Suda, Koganei, JP;
Yutaka Ota, Ota, JP;
Abstract
A switching resistance RAM that is highly integrated as well as reduced in a read-out time is realized. There is formed an NPN type bipolar transistor BT composed of a collector layer made of an N-well, a base layer made of a P+ type Si layerA formed in a surface of the N-well, and an emitter layer made of an N+ type Si layerformed in a surface of the P+ type Si layerA. Also, there are formed a word line WLelectrically connected to the N+ type Si layerand bit lines BL-BLintersecting with the word line WL. Also, there are formed a plurality of switching layersformed on a surface of the P+ type Si layerA, each being electrically connected to corresponding each of the bit lines and switching between an ON state and an OFF state and an electric potential fixing lineA to fix the P+ type Si layerA at a predetermined electric potential.