The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Jul. 18, 2006
Toshiaki Asahi, Toda, JP;
Kenji Sato, Tokyo, JP;
Takayuki Shimizu, Toda, JP;
Nippon Mining & Metals Co., Ltd., Tokyo, JP;
Abstract
The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T, and retaining the temperature of the substrate for a predetermined time; and a second step of gradually reducing the temperature of the substrate from the first heat treatment temperature Tto a second heat treatment temperature Tlower than the heat treatment temperature Twith a predetermined rate, wherein the first heat treatment temperature Tis set in a range of 700° C.≦T≦1250° C. and the second heat treatment temperature Tis set in a range of T≦T−50.