The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Sep. 22, 2010
Applicants:

Rick C. Jerome, Indialantic, FL (US);

Francois Hebert, San Mateo, CA (US);

Craig Mclachlan, Melbourne Beach, FL (US);

Kevin Hoopingarner, Palm Bay, FL (US);

Inventors:

Rick C. Jerome, Indialantic, FL (US);

Francois Hebert, San Mateo, CA (US);

Craig McLachlan, Melbourne Beach, FL (US);

Kevin Hoopingarner, Palm Bay, FL (US);

Assignee:

Intersil Americas Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on the outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.


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