The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Oct. 13, 2010
Applicants:

Zvi Or-bach, San Jose, CA (US);

Brian Cronquist, San Joe, CA (US);

Isreal Beinglass, Sunnyvale, CA (US);

Jan Lodewijk DE Jong, Cupertino, CA (US);

Deepak C. Sekar, San Jose, CA (US);

Inventors:

Zvi Or-Bach, San Jose, CA (US);

Brian Cronquist, San Joe, CA (US);

Isreal Beinglass, Sunnyvale, CA (US);

Jan Lodewijk de Jong, Cupertino, CA (US);

Deepak C. Sekar, San Jose, CA (US);

Assignee:

Monolithic 3D Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method to fabricate a semiconductor device, including the sequence of: implanting one or more regions on a semiconductor wafer forming a doped layer; performing a first transfer of the doped layer onto a carrier; and then performing a second transfer of the doped layer from the carrier to a target wafer; and then etching said one or more regions of the doped layer to form transistors on the doped layer.


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