The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Feb. 11, 2010
Fujio Masuoka, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Fujio Masuoka, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Unisantis Electronics Singapore Pte Ltd., Peninsula Plaza, SG;
Abstract
It is intended to provide a method of producing a semiconductor device, comprising the steps of: providing a substrate on one side of which at least one semiconductor pillar stands; forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar; forming a conductive film on the first dielectric film; removing by etching a portion of the conductive film located on a top surface and along an upper portion of a side surface of the semiconductor pillar; forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar; etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar; forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography; and partially removing by etching the conductive film using the resist pattern as a mask while protecting, by the protective film-based sidewall, the portions of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar, to form a gate electrode and a gate line extending from the gate electrode.