Semiconductor device and method of its manufacture

Abstract

Method of high-yield manufacturing superior semiconductor devices includes: a step of preparing a GaN substrate having a ratio S/S—of collective area (Scm) of inversion domains in, to total area (S cm) of the principal face of, the GaN substrate—of no more than 0.5, with the density along the (0001) Ga face, being the substrate principal face, of inversion domains whose surface area where the polarity in the [0001] direction is inverted with respect to the principal domain (matrix) is 1 μmor more being D cm; and a step of growing on the GaN substrate principal face an at least single-lamina semiconductor layer to form semiconductor devices in which the product S×D of the area Sof the device principal faces, and the density D of the inversion domains is made less than 2.3.