The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Jun. 16, 2011
Applicants:

Michel Bruel, Veurey Voroize, FR;

Bernard Aspar, St. Ismier, FR;

Chrystelle Lagahe-blanchard, Crolles, FR;

Inventors:

Michel Bruel, Veurey Voroize, FR;

Bernard Aspar, St. Ismier, FR;

Chrystelle Lagahe-Blanchard, Crolles, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B29C 44/34 (2006.01); B29C 65/00 (2006.01); H01L 21/30 (2006.01); B32B 37/00 (2006.01); H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract

This invention provides composite semiconductor substrates and methods for fabricating such substrates. The composite structures include a semiconductor substrate, a semiconductor superstrate and an intermediate layer interposed between the substrate and the superstrate that comprises a material that undergoes a structural transformation when subject to a suitable heat treatment. The methods provide such a heat treatment so that the intermediate layer becomes spongy or porous, being filled with numerous micro-bubbles or micro-cavities containing a gaseous phase. The composite semiconductor substrates with structurally-transformed intermediate layers have numerous applications.


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