The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Aug. 03, 2011
Applicants:
Mou-shiung Lin, Hsin-Chu, TW;
Jin-yuan Lee, Hsin-Chu, TW;
Inventors:
Mou-Shiung Lin, Hsin-Chu, TW;
Jin-Yuan Lee, Hsin-Chu, TW;
Assignee:
Megica Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating an integrated circuit (IC) chip includes forming a metal trace having a thickness of between 5 μm and 27 μm over a semiconductor substrate, and forming a passivation layer on the metal trace, wherein the passivation layer includes a layer of silicon nitride on the metal trace and a layer of silicon oxide on the layer of silicon nitride, or includes a layer of silicon oxynitride on the metal trace and a layer of silicon oxide on the layer of silicon oxynitride.