The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Aug. 15, 2011
Applicants:
Dorai Iyer, Phoenix, AZ (US);
Gordon M. Grivna, Mesa, AZ (US);
Jeffrey Pearse, Chandler, AZ (US);
Inventors:
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
Abstract
In one embodiment, a source-down vertical insulated gate field effect transistor includes a source contact that is buried within a trench gate structure. Dopant of a first conductivity type is diffused from the conductive source contact into an adjacent semiconductor layer that has a second and opposite conductivity type to form source regions. A self-aligned metal contact is formed within the trench gate structure to short the source contact and the source regions to an underlying substrate.