The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Sep. 07, 2011
Hsin-chih Tai, San Jose, CA (US);
Keh-chiang Ku, Cupertino, CA (US);
Duli Mao, Sunnyvale, CA (US);
Vincent Venezia, Los Gatos, CA (US);
Gang Chen, San Jose, CA (US);
Hsin-Chih Tai, San Jose, CA (US);
Keh-Chiang Ku, Cupertino, CA (US);
Duli Mao, Sunnyvale, CA (US);
Vincent Venezia, Los Gatos, CA (US);
Gang Chen, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
An isolation area that provides additional active area between semiconductor devices on an integrated circuit is described. In one embodiment, the invention includes a complementary metal oxide semiconductor transistor of an image sensor having a source, a drain, and a gate between the source and the drain, the transistor having a channel to couple the source and the drain under the influence of the gate, and an isolation barrier surrounding a periphery of the source and the drain to isolate the source and the drain from other devices, wherein the isolation barrier is distanced from the central portion of the channel.