The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jan. 21, 2011
Kangguo Cheng, Guilderland, NY (US);
Louis C. Hsu, Fishkill, NY (US);
William R. Tonti, Essex Junction, VT (US);
Chih-chao Yang, Glenmont, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Louis C. Hsu, Fishkill, NY (US);
William R. Tonti, Essex Junction, VT (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method forms an eFuse structure that has a pair of adjacent semiconducting fins projecting from the planar surface of a substrate (in a direction perpendicular to the planar surface). The fins have planar sidewalls (perpendicular to the planar surface of the substrate) and planar tops (parallel to the planar surface of the substrate). The tops are positioned at distal ends of the fins relative to the substrate. An insulating layer covers the tops and the sidewalls of the fins and covers an intervening substrate portion of the planar surface of the substrate located between the fins. A metal layer covers the insulating layer. A pair of conductive contacts are connected to the metal layer at locations where the metal layer is adjacent the top of the fins.