The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Dec. 05, 2006
Applicant:
Darwin Gene Enicks, Colorado Springs, CO (US);
Inventor:
Darwin Gene Enicks, Colorado Springs, CO (US);
Assignee:
Atmel Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and system for providing a metal oxide semiconductor (MOS) device are described. The method and system include providing a source, a drain, and a channel residing between the source and the drain. At least a portion of the channel includes an alloy layer including an impurity having a graded concentration. The method and system also include providing a gate dielectric and a gate electrode. At least a portion of the gate dielectric resides above the alloy layer. The gate dielectric resides between the alloy layer and the gate electrode.