The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jul. 10, 2006
Naho Mizuhara, Itami, JP;
Michimasa Miyanaga, Itami, JP;
Tomohiro Kawase, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Naho Mizuhara, Itami, JP;
Michimasa Miyanaga, Itami, JP;
Tomohiro Kawase, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal () is grown by vapor-phase epitaxy onto a seed crystal substrate () placed inside a crystal-growth compartment () within a crystal-growth vessel () provided within a reaction chamber, and is characterized in that during growth of the crystal, carbon-containing gas is supplied to the inside of the crystal-growth compartment ().