The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2013

Filed:

Jun. 05, 2008
Applicants:

Yoshiaki Tatsumi, Kawasaki, JP;

Kinya Miyashita, Kawasaki, JP;

Inventors:

Yoshiaki Tatsumi, Kawasaki, JP;

Kinya Miyashita, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B25B 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a substrate suction apparatus which has a vacuum suction mechanism and an electrostatic attraction mechanism, and improves planarity of a subject to be processed by improving uniformity in vacuum suction power. A method for manufacturing such substrate suction apparatus is also provided. A substrate suction apparatus () is provided with a base board (), a dielectric body (), an electrostatic attraction mechanism () and a vacuum suction mechanism (). Specifically, the dielectric body () is composed of a downmost dielectric layer (), an intermediate dielectric layer () and a topmost dielectric layer (). The electrostatic attraction mechanism () is composed of attraction electrodes () and a direct current power supply. The vacuum suction mechanism () is composed of a groove (), a suction channel (), a porous dielectric body () and the porous attraction electrodes (). The downmost dielectric layer (), the intermediate dielectric layer () and the topmost dielectric layer () are formed by spraying ceramic particles, and the attraction electrodes () are formed by spraying tungsten particles. The average pore diameter and porosity of the downmost dielectric layer () are set maximum, and those of the topmost dielectric layer () are set minimum.


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