The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Dec. 09, 2011
Shang-wei Fang, Yilan County, TW;
Ying-je Chen, Taichung, TW;
Hong-yi Liao, Hsinchu, TW;
Wein-town Sun, Taoyuan County, TW;
Yu-hsiung Tsai, Hsinchu, TW;
Cheng-jye Liu, Hsinchu County, TW;
Shang-Wei Fang, Yilan County, TW;
Ying-Je Chen, Taichung, TW;
Hong-Yi Liao, Hsinchu, TW;
Wein-Town Sun, Taoyuan County, TW;
Yu-Hsiung Tsai, Hsinchu, TW;
Cheng-Jye Liu, Hsinchu County, TW;
eMemory Technology Inc., Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A method of programming a nonvolatile memory cell which comprises a select transistor and a memory transistor includes applying a preset limit current to a first input of the memory cell, applying a limit voltage to a current limiting circuit electrically connected to a second input of the memory cell, applying a limit voltage to stabilize a voltage drop of the memory cell, and applying a ramped gate voltage to the memory cell to program the memory cell with a preset limited current determined by the current limiting circuit.