The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Apr. 01, 2011
Makoto Nakanishi, Miyagi, JP;
Tomoo Yamanouchi, Miyagi, JP;
Junichi Okayasu, Miyagi, JP;
Taku Sato, Miyagi, JP;
Daiju Terasawa, Miyagi, JP;
Masahiko Takikawa, Kanagawa, JP;
Makoto Nakanishi, Miyagi, JP;
Tomoo Yamanouchi, Miyagi, JP;
Junichi Okayasu, Miyagi, JP;
Taku Sato, Miyagi, JP;
Daiju Terasawa, Miyagi, JP;
Masahiko Takikawa, Kanagawa, JP;
Advantest Corporation, Tokyo, JP;
Abstract
It is an objective to provide a semiconductor device with low leak current. The semiconductor device includes a plurality of ground side electrodes and a plurality of signal side electrodes arranged on a semiconductor substrate in an alternating manner; a plurality of control electrodes arranged respectively between each pair of a ground side electrode and a signal side electrode; a ground side electrode connecting section that connects the ground side electrodes to each other; a signal side electrode connecting section that connects the signal side electrodes to each other; and ground side lead wiring and signal side lead wiring that extend respectively from a region near one end and a region near another end of an arranged electrode section, in which the ground side electrodes and the signal side electrodes are arranged in an arrangement direction, away from the arranged electrode group in the arrangement direction.