The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Jun. 02, 2011
Applicants:
Hsing-fei Chou, Daxi Township, TW;
Chia-hua Chu, Zhubei, TW;
Jieh-jang Chen, Hsinchu, TW;
Feng-jia Shiu, Jhudong Township, TW;
Hung Chang Hsieh, Hsinchu, TW;
Inventors:
Hsing-Fei Chou, Daxi Township, TW;
Chia-Hua Chu, Zhubei, TW;
Jieh-Jang Chen, Hsinchu, TW;
Feng-Jia Shiu, Jhudong Township, TW;
Hung Chang Hsieh, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor structure includes forming an opening in a substrate. A dielectric layer is formed and substantially conformal to the opening. A sacrificial structure is formed within the opening, covering a portion of the dielectric layer. A portion of the dielectric layer is removed by using the sacrificial structure as an etch mask layer. The sacrificial structure is removed.