The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Dec. 28, 2011
Yung-fa Lin, Hsinchu, TW;
Shou-yi Hsu, Hsinchu County, TW;
Meng-wei Wu, Hsinchu, TW;
Main-gwo Chen, Hsinchu County, TW;
Chia-hao Chang, Hsinchu, TW;
Chia-wei Chen, Taipei, TW;
Yung-Fa Lin, Hsinchu, TW;
Shou-Yi Hsu, Hsinchu County, TW;
Meng-Wei Wu, Hsinchu, TW;
Main-Gwo Chen, Hsinchu County, TW;
Chia-Hao Chang, Hsinchu, TW;
Chia-Wei Chen, Taipei, TW;
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A method for fabricating a Schottky device includes the following sequences. First, a substrate with a first conductivity type is provided and an epitaxial layer with the first conductivity type is grown on the substrate. Then, a patterned dielectric layer is formed on the epitaxial layer, and a metal silicide layer is formed on a surface of the epitaxial layer. A dopant source layer with a second conductivity type is formed on the metal silicide layer, followed by applying a thermal drive-in process to diffuse the dopants inside the dopant source layer into the epitaxial layer. Finally, a conductive layer is formed on the metal silicide layer.