The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2013

Filed:

Apr. 20, 2011
Applicants:

Yonggang Wu, Santa Clara, CA (US);

Guowei Wang, Cupertino, CA (US);

Nian Yang, Mountain View, CA (US);

Sachit Chandra, Sunnyvale, CA (US);

Aaron Lee, Mountain View, CA (US);

Inventors:

Yonggang Wu, Santa Clara, CA (US);

Guowei Wang, Cupertino, CA (US);

Nian Yang, Mountain View, CA (US);

Sachit Chandra, Sunnyvale, CA (US);

Aaron Lee, Mountain View, CA (US);

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 8/08 (2006.01); G11C 8/12 (2006.01); G11C 16/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device includes an array of non-volatile memory cells. When programming the memory cells, a voltage supply source is used that includes multiple independent charge pumps. The independent charge pumps supply the programming voltage to different ones of bit lines in the array of memory cells. Using multiple charge pumps tends to reduce output voltage fluctuations and thereby reduce power loss.


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