The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Aug. 03, 2010
Applicants:
Seunghyun Moon, Seoul, KR;
Kihwan Choi, Seongnam Si, KR;
Jaesung Sim, Yongin Si, KR;
Jungdal Choi, Suwon Si, KR;
Inventors:
Seunghyun Moon, Seoul, KR;
Kihwan Choi, Seongnam Si, KR;
Jaesung Sim, Yongin Si, KR;
Jungdal Choi, Suwon Si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying a programming pulse, an erasing pulse, a time delay, a soft erase pulse, soft programming pulse and/or a verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.