The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Jun. 30, 2009
Erich F. Haratsch, Bethlehem, PA (US);
Milos Ivkovic, Allentown, PA (US);
Victor Krachkovsky, Allentown, PA (US);
Nenad Miladinovic, Campbell, CA (US);
Andrei Vityaev, San Jose, CA (US);
Johnson Yen, Fremont, CA (US);
Erich F. Haratsch, Bethlehem, PA (US);
Milos Ivkovic, Allentown, PA (US);
Victor Krachkovsky, Allentown, PA (US);
Nenad Miladinovic, Campbell, CA (US);
Andrei Vityaev, San Jose, CA (US);
Johnson Yen, Fremont, CA (US);
LSI Corporation, San Jose, CA (US);
Abstract
Methods and apparatus are provided for read-side intercell interference mitigation in flash memories. A flash memory device is read by obtaining a read value for at least one target cell; obtaining a value representing a voltage stored in at least one aggressor cell that was programmed after the target cell; determining intercell interference for the target cell from the at least one aggressor cell; and obtaining a new read value that compensates for the intercell interference by removing the determined intercell interference from the read value for the at least one target cell. The new read value can optionally be provided to a decoder. In an iterative implementation, one or more intercell interference mitigation parameters can be adjusted if a decoding error occurs.