The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Feb. 04, 2011
Applicant:
Lung-ching Kao, Taipei, TW;
Inventor:
Lung-Ching Kao, Taipei, TW;
Assignee:
Vishay General Semiconductor LLC, Hauppauge, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/88 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor rectifier is provided which includes a semiconductor substrate having a first type of conductivity. An epitaxial layer is formed on the substrate. The epitaxial layer has the first type of conductivity and is more lightly doped than the substrate. A plurality of floating gates is formed in the epitaxial layer and a metal layer is disposed over the epitaxial layer to form a Schottky contact therebetween. A first electrode is formed over the metal layer and a second electrode is formed on a backside of the substrate.