The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Mar. 05, 2010
Applicants:
Jaehun Jeong, Hwaseong-si, KR;
Hansoo Kim, Suwon-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Sunil Shim, Seoul, KR;
Suyoun Lee, Yongin-si, KR;
Inventors:
Jaehun Jeong, Hwaseong-si, KR;
Hansoo Kim, Suwon-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Sunil Shim, Seoul, KR;
Suyoun Lee, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
A vertical NAND string nonvolatile memory device can include an upper dopant region disposed at an upper portion of an active pattern and can have a lower surface located a level higher than an upper surface of an upper selection gate pattern. A lower dopant region can be disposed at a lower portion of the active pattern and can have an upper surface located at a level lower than a lower surface of a lower selection gate pattern.