The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Apr. 14, 2011
Lie-yong Yang, Hsinchu, TW;
Sheng Chiang Hung, Hsinchu, TW;
Kian-long Lim, Hsinchu, TW;
Ping-wei Wang, Hsin-Chu, TW;
Lie-Yong Yang, Hsinchu, TW;
Sheng Chiang Hung, Hsinchu, TW;
Kian-Long Lim, Hsinchu, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit device and method for manufacturing the same are disclosed. An exemplary device includes a semiconductor substrate having a substrate surface; a trench isolation structure disposed in the semiconductor substrate, the trench isolation structure having a trench isolation structure surface that is substantially planar to the substrate surface; and a gate feature disposed over the semiconductor substrate, wherein the gate feature includes a portion that extends from the substrate surface to a depth in the trench isolation structure, the portion being defined by a trench isolation structure sidewall and a semiconductor substrate sidewall, such that the portion tapers from a first width at the substrate surface to a second width at the depth, the first width being greater than the second width.