The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
May. 03, 2007
Applicants:
Khalid Radouane, Carrieres sur Seine, FR;
Alessandro Baldaro, Catania, IT;
Inventors:
Khalid Radouane, Carrieres sur Seine, FR;
Alessandro Baldaro, Catania, IT;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a method of treating wafers comprising at least one surface layer of silicon-germanium (SiGe) and a layer of strained silicon (sSi) in contact with the SiGe layer, the sSi layer being exposed by etching of the SiGe layer, the method comprising the steps of: The present invention relates to a wafer comprising at least one surface layer of strained silicon (sSi), the at least one surface layer of sSi having a thickness of at least 5 nm and at most 100 μm and having at most 200 defects per wafer.