The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Jan. 21, 2009
Wenzhuo Guo, Cupertino, CA (US);
Fabio Zürcher, Brisbane, CA (US);
Arvind Kamath, Mountain View, CA (US);
Joerg Rockenberger, San Jose, CA (US);
Wenzhuo Guo, Cupertino, CA (US);
Fabio Zürcher, Brisbane, CA (US);
Arvind Kamath, Mountain View, CA (US);
Joerg Rockenberger, San Jose, CA (US);
Kovio, Inc., San Jose, CA (US);
Abstract
Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.