The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Dec. 09, 2010
Applicants:
Manchao Xiao, San Diego, CA (US);
Liu Yang, Yorba Linda, CA (US);
Kirk Scott Cuthill, Vista, CA (US);
Heather Regina Bowen, Vista, CA (US);
Bing Han, Lansdale, PA (US);
Mark Leonard O'neill, San Marcos, CA (US);
Inventors:
Manchao Xiao, San Diego, CA (US);
Liu Yang, Yorba Linda, CA (US);
Kirk Scott Cuthill, Vista, CA (US);
Heather Regina Bowen, Vista, CA (US);
Bing Han, Lansdale, PA (US);
Mark Leonard O'Neill, San Marcos, CA (US);
Assignee:
Air Products and Chemicals, Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
Abstract
Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: