The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Sep. 01, 2010
Maki Sugai, Tokyo, JP;
Shinji Saito, Kanagawa, JP;
Rei Hashimoto, Tokyo, JP;
Yasushi Hattori, Kanagawa, JP;
Jongil Hwang, Kanagawa, JP;
Masaki Tohyama, Kanagawa, JP;
Shinya Nunoue, Chiba, JP;
Maki Sugai, Tokyo, JP;
Shinji Saito, Kanagawa, JP;
Rei Hashimoto, Tokyo, JP;
Yasushi Hattori, Kanagawa, JP;
Jongil Hwang, Kanagawa, JP;
Masaki Tohyama, Kanagawa, JP;
Shinya Nunoue, Chiba, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.