The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Nov. 25, 2008
Pierre Fereyre, Voreppe, FR;
Simon Caruel, Grenoble, FR;
Pierre Fereyre, Voreppe, FR;
Simon Caruel, Grenoble, FR;
E2V Semiconductors, Saint Egreve, FR;
Abstract
The invention relates to image sensors produced with CMOS technology, whose individual pixels, arranged in an array of rows and columns, each consist of a photodiode (PD) associated with a charge storage region (N) which receives the photogenerated charge before a charge readout phase. To eliminate the risk of introducing kTC-type noise into the signal, during the reset of the storage zone (N) at the end of a readout cycle, the invention proposes that the storage zone be divided into two parts one of which (N), adjacent to the reset gate (G), is covered by a diffused region (P) of the same type of conductivity as the substrate in which the photodiode is formed, this region being brought to the fixed potential of the substrate, and the other (N) of which is not covered by such a region and is not adjacent to the reset gate.