The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Apr. 11, 2012
Stacia Keller, Santa Barbara, CA (US);
Umesh K. Mishra, Montecito, CA (US);
Nicholas A. Fichtenbaum, Santa Barbara, CA (US);
Stacia Keller, Santa Barbara, CA (US);
Umesh K. Mishra, Montecito, CA (US);
Nicholas A. Fichtenbaum, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.