The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2013

Filed:

Oct. 05, 2011
Applicants:

Feng Zhao, Shanghai, CN;

Wufeng Deng, Shanghai, CN;

Jingmin Zhao, Shanghai, CN;

Feng Chen, Shanghai, CN;

Chunliang Liu, Shanghai, CN;

Inventors:

Feng Zhao, Shanghai, CN;

Wufeng Deng, Shanghai, CN;

Jingmin Zhao, Shanghai, CN;

Feng Chen, Shanghai, CN;

Chunliang Liu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A chemical mechanical polishing method includes providing a device layer having a surface to be polished, polishing the surface using an alkaline grinding slurry, removing a residual layer that is been formed on the polished surface using an acid buffer, forming a passivation layer covering the polished surface of the device layer after the residual layer has been removed, and cleaning the passivation layer using deionized water. A semiconductor device thus fabricated has surfaces with excellent flatness, good manufacturing yield and long-term reliability.


Find Patent Forward Citations

Zhao, Feng. (2013). Chemical mechanical polishing method (U.S. Patent No. 8455362). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8455362

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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