The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Apr. 26, 2011
Applicant:
Toshiya Nakamori, Tokyo, JP;
Inventor:
Toshiya Nakamori, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a semiconductor device includes the following processes. A first well including a memory cell region of a semiconductor substrate is formed. A second well including a first peripheral circuit region of the semiconductor substrate is formed after forming the first well.
Nakamori, Toshiya. (2013). Method of forming a semiconductor device introducing plural impurities to form plural wells (U.S. Patent No. 8455338). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8455338
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