The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Nov. 14, 2011
Robert C. Linares, Sherborn, MA (US);
Patrick J. Doering, Holliston, MA (US);
William W. Dromeshauser, Norwell, MA (US);
Bryant Linares, Sherborn, MA (US);
Alfred R. Genis, East Douglas, MA (US);
Robert C. Linares, Sherborn, MA (US);
Patrick J. Doering, Holliston, MA (US);
William W. Dromeshauser, Norwell, MA (US);
Bryant Linares, Sherborn, MA (US);
Alfred R. Genis, East Douglas, MA (US);
Apollo Diamond, Inc, Framingham, MA (US);
Abstract
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.