The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Apr. 30, 2010
Takuya Takahashi, Kato, JP;
Fumihiro Fuchino, Kakogawa, JP;
Yuuichi Kohno, Sanda, JP;
Masanori Miyata, Akashi, JP;
Takuya Takahashi, Kato, JP;
Fumihiro Fuchino, Kakogawa, JP;
Yuuichi Kohno, Sanda, JP;
Masanori Miyata, Akashi, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device having a first wiring layer, a first interlayer insulating film, a second interlayer insulating film, a third interlayer insulating film, and a second wiring layer, in which the method includes depositing the second wiring layer on the third interlayer insulating film and, where the widths of first wiring layer and the second wiring layer are 10.0 μm or greater, executing one of etching the second wiring layer to set a width of 1.0 μm or greater in a portion where the first wiring layer and the second wiring layer overlap and etching the second wiring layer to seta horizontal distance of 2.0 μm or greater between adjacent portions of the first wiring layer and the second wiring layer.