The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Aug. 11, 2011
Dae-cheol Kim, Suwon-si, KR;
Sung-ryul Kim, Asan-si, KR;
Yun-jong Yeo, Seoul, KR;
Hong-kee Chin, Suwon-si, KR;
Ki-hun Jeong, Cheongan-si, KR;
Dae-Cheol Kim, Suwon-si, KR;
Sung-Ryul Kim, Asan-si, KR;
Yun-Jong Yeo, Seoul, KR;
Hong-Kee Chin, Suwon-si, KR;
Ki-Hun Jeong, Cheongan-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.