The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jul. 15, 2011
Applicants:
Ming-te Liu, Taipei, TW;
Tien-wei Chiang, Hsinchu, TW;
Ya-chen Kao, Fuxing Township, TW;
Wen-cheng Chen, Hsinchu, TW;
Inventors:
Ming-Te Liu, Taipei, TW;
Tien-Wei Chiang, Hsinchu, TW;
Ya-Chen Kao, Fuxing Township, TW;
Wen-Cheng Chen, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MTJ.