The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2013

Filed:

Nov. 16, 2009
Applicants:

Brent A. Buchine, Watertown, MA (US);

Faris Modawar, Georgetown, TX (US);

Marcie R. Black, Lincoln, MA (US);

Inventors:

Brent A. Buchine, Watertown, MA (US);

Faris Modawar, Georgetown, TX (US);

Marcie R. Black, Lincoln, MA (US);

Assignee:

Bandgap Engineering, Inc., Woburn, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.


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